Comprehensive thin-film technology services from a CIGS photovoltaic industry leader
Comprehensive thin-film technology services from a CIGS photovoltaic industry leader

Precision thermal processing for CIGS absorber formation and material optimization.
Coatings Details Max Size (cm)
Ag DC-Sputtering 10x10
IZO* RF-Sputtering, n-type, 30x30
ZnO:Al DC-Sputtering, n-type, 1wt% Al, 30x90 (other Al doping levels upon request)
ZnMgO:Al RF-Sputtering, n-type, 30x90
various Mg compositions,
Al doping levels
ZnOS RF-Sputtering, n-type, 30x60
various S/S+O compositions
NiOx RF sputtering, p-type, 30x90
possibility with 2% wt% Cu
InS:Na Thermal Co-Evaporation, n-type, 30x60
Eg=2..2.2eV, Na doping up to 15at%
C60 Thermal Evaporation, n-type, 30x30
Source purity 99.99%,
BCP Thermal Evaporation, 30x30
LiF Thermal Evaporation 30x30
Cu Sputtering 30x30
CuGa Sputtering, various Ga compositions 30x30
In Sputtering 30x30
CuNaF Sputtering 30x30
Mo Mo as metal, Reactive to form MoN 30x30
AgGa About 70at% Ag and 30at% Ga 30x30
CuSb About 10at% Sb and 90at% Cu 30x30
Se Thermal evaporation 30x30
Precision thermal processing for CIGS absorber formation and material optimization.
Annealing Process Details Max Size (cm)
Option 1 Atmosphere-Controlled Thermal Annealing 60x90
Specialized processing in sulfur-rich or inert
environments at temperatures up to 580°C for
material phase transformation and grain growth
Option 2 High-Precision Rapid Thermal Annealing (RTA) 30x30
Advanced thermal processing up to 600°C with
ultra-low oxygen levels (<10 ppm). Features rapid,
programmable ramping (up to 2.8°C/s) for precise
kinetic control and sulfurization/desulfurization
High-precision laser structuring and mechanical patterning capabilities.
Laser & Patterning Details Max Size (cm)
Laser High-precision ps-laser (1-10 ps) structuring, 40x40 Patterning Wavelengths: 1064/1030/515/343 nm,
Processes: Single/Multishot (25kHz-4MHz),
Max Power: 30W, Resolution: <10 µm, XY
Accuracy: <5 µm, Supports, flexible complex
patterns via pulse-on-demand
Edge Deletion High power ns laser ~700 W, Wavelength: 60x90
1064 nm, Removal of complete layer stacks,
Scanning optics allow variable removal areas
Laser engraving CO2 laser engraver, Wavelength 10,6 µm, 45x30
Maximum power: 30W, Speed: 1.5 m/s,
Flexible Designs possible
Mechanical Mechanical patterning via tungsten carbide 40x40
scratching needles, scratching
Line width: down to <10 µm, XY accuracy:
<5 µm, High pattern design flexibility
Precision printing and metallization services for front contact formation.
Griding & Printing Details Max Size (cm)
Printed Electronics Conductive traces & electrodes, 30x30
Ag/Cu inks, PCB prototyping
Solar Cell Contacts Fine-line front metallization, Si/CIGS, 30x30
Oven sintering
UV Functional Dielectrics, encapsulation, Optical 30x30
coating layers, In-line UV cure
RFID / IoT Antennas HF & UHF coils, inductive loops, Flexible 30x30 substrates, Maskless printing
Sensor Electrodes Gas, humidity, biosensors, Carbon, 30x30
Ag, Ag/AgCl inks
Photomask 100 μm resolution; Microfluidics , 30x30
patterning MEMS, Lab-on-chip
Advanced analytical capabilities for thin-film and solar cell performance evaluation.
Characterization Details Max Size (cm)
Method
XRF X-Ray Fluorescence, employed to obtain integral 30x30
elemental compositions
Raman Raman spectroscopy, employed to obtain 30x30
information about surface-near compounds,
laser wavelength = 632 nm
GDOES Glow-Discharge Optical Emission Spectroscopy, 30x30
employed for depth-profiling of sample composition
TRPL Time-Resolved Photoluminescence, employed to 30x30 measure charge-carrier lifetimes
Confocal Confocal Microscopy, employed to obtain a 3D 30x30
Microscopy image and figures of merit of a surface's topography
Spectro- Wavelength 250-2500 nm, integrating sphere & 5x10
metry standard transmission cuvettes
Spectral PL Absolute PLQY measurement 2.5x2.5
Hall Measures the resistivity, carrier concentration 2x2
and mobility for 300K or 77K (Liquid Nitrogen)
Ellipso- Computer-controlled goniometer, 280-820nm, Ø 15
metry Transmission sample holder, μ-Spot
(200 μm focal diameter)
Fringer White light interferometer, 350-820 nm 60x90
Resistance Standard 4-Probe Resistance and High-impedance 60x90
measurement, Resistance measurement range
from 0.9 * 10³ ohms to 1.6 * 10¹⁰ ohms
Flash IV IV measurement of full size PV modules 200x105
Constant Temperature controlled (15-65°C) 30x30
light IV measurements of lab-size PV modules under
AM1.5 spectrum and other spectra. Tandem
temperature control available for samples size
10x10 cm²
IV under IV measurement under customised spectrum 20x20
LED light up to 1300nm (e.g. AM1.5, AM0, minimised spectral mismatch) and with temperature control from 15°C
to 65°C
Outdoor Performance monitoring for modules at an 200x105
perfor- inclination of 31° or vertical orientation.
mance Other orientations may be available on request
Outdoor Temperature and irradiance measurements taken 200x105
depen- in parallel to outdoor monitoring for analysis of
dence low light irradiance behaviour and temperature coefficient
Outdoor Visual assessment using photographs and colour 200x105 inspection measurements
EL imaging Electroluminescence of wavelengths up to 1100nm 30x30
DLIT/ILIT Lock-in thermography with electrical excitation of 30x30
up to 120V (DLIT) and optical excitation (single wave-
length at 930nm) for unilluminated samples. 10x
magnification available for DLIT measurements.
Climatic Accelerated aging in high humidity and high 60x90 chamber temperature as well as thermal cycling
Continuous Mpp-tracking under Xe or LED spectrum with
light expo- irradiation intensity up to 1,000 W/m2
sure
Prototyping Special measurement and control systems tailored / to customers application
System Analyse failure and component characteristics /
failure
analysis
Years Experience
Decades of leadership in CIGS thin-film photovoltaic technology
State-of-the-Art Equipment
Advanced laboratory facilities for precision research and development
Customized Solutions
Tailored approaches for each partner´s unique requirements